Towards Control of the Size, Composition and Surface Area of NiO Nanostructures by Sn Doping

Achieving nanostructures with high surface area is one of the most challenging tasks as this metric usually plays a key role in technological applications, such energy storage, gas sensing or photocatalysis, fields which NiO gaining increasing attention recently. Furthermore, advent modern NiO-based devices can take advantage deeper knowledge doping process NiO, and fabrication p-n heterojunctions. By controlling experimental conditions dopant concentration, reaction time, temperature pH, morphology mechanisms be modulated. In work, undoped Sn doped nanoparticles NiO/SnO2 areas were obtained result incorporation. We demonstrate that incorporation leads to formation nanosticks morphology, not previously observed for promoting heterostructures. Consequently, value around 340 m2/g was 4.7 at.% Sn, nearly nine times higher than NiO. The presence different oxidation states variable Ni3+/Ni2+ ratio function content also verified by XPS, suggesting combination two charge compensation (electronic ionic) substitution Ni2+ Sn4+. These results make potential candidate number implementations achieved form NiO–SnO2